PRODUCTION OF CRYSTAL OF MIXED CRYSTAL SEMICONDUCTOR

PURPOSE: To produce a mixed crystal material having controlled mixed crystal distribution in the direction of growing axis and small microscopic segregation and to form a single crystal from the produced crystal taking advantage of the transfer of a melting zone. CONSTITUTION: A mixed crystal semiconductor crystal is produced by mixing a part of a raw material 11 consisting of a compound or element constituting the mixed crystal with an adding raw material 12 consisting of the other compound or element constituting the mixed crystal and carrying out the zone melting of the mixture simultaneously with the mixing process. The effective partition coefficient of the adding raw material 12 to the former raw material 11 is made to be >1 by selecting the kinds of both raw materials. A mixed crystal single crystal is produced by carrying out the zone melting of the polycrystalline material produced by the above method from the end side of the zone melting in the production of the polycrystalline material toward the starting side.