PRODUCTION OF CRYSTAL OF MIXED CRYSTAL SEMICONDUCTOR
PURPOSE: To produce a mixed crystal material having controlled mixed crystal distribution in the direction of growing axis and small microscopic segregation and to form a single crystal from the produced crystal taking advantage of the transfer of a melting zone. CONSTITUTION: A mixed crystal semico...
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| creator | NISHIZAWA JUNICHI KAWASHIMA MASATO SAWAFUJI YUTAKA |
| description | PURPOSE: To produce a mixed crystal material having controlled mixed crystal distribution in the direction of growing axis and small microscopic segregation and to form a single crystal from the produced crystal taking advantage of the transfer of a melting zone. CONSTITUTION: A mixed crystal semiconductor crystal is produced by mixing a part of a raw material 11 consisting of a compound or element constituting the mixed crystal with an adding raw material 12 consisting of the other compound or element constituting the mixed crystal and carrying out the zone melting of the mixture simultaneously with the mixing process. The effective partition coefficient of the adding raw material 12 to the former raw material 11 is made to be >1 by selecting the kinds of both raw materials. A mixed crystal single crystal is produced by carrying out the zone melting of the polycrystalline material produced by the above method from the end side of the zone melting in the production of the polycrystalline material toward the starting side. |
| format | Patent |
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CONSTITUTION: A mixed crystal semiconductor crystal is produced by mixing a part of a raw material 11 consisting of a compound or element constituting the mixed crystal with an adding raw material 12 consisting of the other compound or element constituting the mixed crystal and carrying out the zone melting of the mixture simultaneously with the mixing process. The effective partition coefficient of the adding raw material 12 to the former raw material 11 is made to be >1 by selecting the kinds of both raw materials. A mixed crystal single crystal is produced by carrying out the zone melting of the polycrystalline material produced by the above method from the end side of the zone melting in the production of the polycrystalline material toward the starting side.</description><edition>6</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960312&DB=EPODOC&CC=JP&NR=H0867594A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960312&DB=EPODOC&CC=JP&NR=H0867594A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NISHIZAWA JUNICHI</creatorcontrib><creatorcontrib>KAWASHIMA MASATO</creatorcontrib><creatorcontrib>SAWAFUJI YUTAKA</creatorcontrib><title>PRODUCTION OF CRYSTAL OF MIXED CRYSTAL SEMICONDUCTOR</title><description>PURPOSE: To produce a mixed crystal material having controlled mixed crystal distribution in the direction of growing axis and small microscopic segregation and to form a single crystal from the produced crystal taking advantage of the transfer of a melting zone. 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CONSTITUTION: A mixed crystal semiconductor crystal is produced by mixing a part of a raw material 11 consisting of a compound or element constituting the mixed crystal with an adding raw material 12 consisting of the other compound or element constituting the mixed crystal and carrying out the zone melting of the mixture simultaneously with the mixing process. The effective partition coefficient of the adding raw material 12 to the former raw material 11 is made to be >1 by selecting the kinds of both raw materials. A mixed crystal single crystal is produced by carrying out the zone melting of the polycrystalline material produced by the above method from the end side of the zone melting in the production of the polycrystalline material toward the starting side.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PRODUCTION OF CRYSTAL OF MIXED CRYSTAL SEMICONDUCTOR |
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