GATE ARRAY BASE CELL SUBSTRATE CONTACT AND MANUFACTURE THEREOF

GATE ARRAY BASE CELL SUBSTRATE CONTACT AND MANUFACTURE THEREOF

PURPOSE: To provide a method for efficiently forming a silicon area on a substrate for a gate array base cell substrate contact and the substrate contact prepared based on this method. CONSTITUTION: For the formation of substrate contact, polysilicon is cut and a gate array base cell is formed. At t...

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Bibliographische Detailangaben
Hauptverfasser: HASHIMOTO SEIJI, SHIBARINGU ESU MAHANTO SHIETSUTEI, RUISU ENU HATSUTAA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: To provide a method for efficiently forming a silicon area on a substrate for a gate array base cell substrate contact and the substrate contact prepared based on this method. CONSTITUTION: For the formation of substrate contact, polysilicon is cut and a gate array base cell is formed. At the same time, a process for removing a polysilicon gate layer through etching is included. This method includes a process for insulating a lead from the substrate of lower layer, by forming openings 40, 42 and 44 on a field oxide layer and an insulating layer.