SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PURPOSE:To obtain a semiconductor integrated circuit device having redundancy function in which high capacity, low power consumption, low price and high reliability are realized by providing a redundancy fuse circuit, a switching signal generation circuit, and a selection circuit. CONSTITUTION:A redundancy fuse circuit FUS (not shown) designates a memory array having a defect among memory arrays 1-01 each holding defect information and including a data line and a word line. A switching signal generation circuit GEN delivers a switching signal based on defect information received from the redundancy fuse circuit FUS through terminals RSL, BL1-3. Selection circuits SEL111-118, 121-128 are provided while corresponding to two adjacent memory arrays among the memory arrays 1-01 and connected electrically with one of them depending on the switching signal. The defect information comprises a plurality of pieces of binary information and the number of switching signals is higher than that of the binary information. This constitution decreases the area being occupied by the elements constituting means for holding the defect information thus realizing a high capacity device.