SEMICONDUCTOR COATING FILM FORMING METHOD

PURPOSE:To obtain a flat coating film formed on the whole surface of a wafer even when there are relatively large recesses and protrusions on wafer surface by a method wherein a semiconductor wafer is rotated at high speed for several seconds after coating liquid has been discharged, and the semiconductor wafer is lastly rotated at low speed for several to several-tens seconds. CONSTITUTION:After a coating liquid has been discharged to the center part of the surface of a semiconductor wafer which is rotatably supported, the coating liquid is applied to the entire surface of the semiconductor wafer by centrifugal force by rotating the wafer at high speed, and excessive coating liquid is shaked off. In the semiconductor coating film forming method of the above- mentioned spin-coating system, the semiconductor wafer is rotated at high speed for several seconds after the coating liquid has been discharged, and the wafer is lastly rotated at low speed for several to several-tens seconds. For example, the coating liquid such as SOG and the like is discharged to the surface center of the semiconductor wafer in the state of low speed rotation of several-tens to several hundred rpm.