METAL PLATING MASK PATTERN
PURPOSE:To form in uniform film thickness a metal plating mask pattern used as a light shielding layer at the time of exposing a resist layer in a resist pattern forming stage. CONSTITUTION:A dummy pattern part 14 consisting of a metal plating part 15 and a non-plating part 16 are provided at a peri...
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| creator | ASAKA KENJI KUBOZONO KENICHI UMEDA KAZUO |
| description | PURPOSE:To form in uniform film thickness a metal plating mask pattern used as a light shielding layer at the time of exposing a resist layer in a resist pattern forming stage. CONSTITUTION:A dummy pattern part 14 consisting of a metal plating part 15 and a non-plating part 16 are provided at a periphery of a working-effective pattern part 10 in which a pattern corresponding to a resist pattern is formed by metal plating. A dimensional change of the pattern is prevented, and a high precision metal plating mask pattern is obtained even if a substrate has large area. A high precision fine pattern can be formed efficiently by patterning a photo resist layer by using such a metal plating mask pattern. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH0844037A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH0844037A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH0844037A3</originalsourceid><addsrcrecordid>eNrjZJDydQ1x9FEI8HEM8fRzV_B1DPZWCHAMCXEN8uNhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GFiYmBsbmjsZEKAEA87kgAQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METAL PLATING MASK PATTERN</title><source>esp@cenet</source><creator>ASAKA KENJI ; KUBOZONO KENICHI ; UMEDA KAZUO</creator><creatorcontrib>ASAKA KENJI ; KUBOZONO KENICHI ; UMEDA KAZUO</creatorcontrib><description>PURPOSE:To form in uniform film thickness a metal plating mask pattern used as a light shielding layer at the time of exposing a resist layer in a resist pattern forming stage. CONSTITUTION:A dummy pattern part 14 consisting of a metal plating part 15 and a non-plating part 16 are provided at a periphery of a working-effective pattern part 10 in which a pattern corresponding to a resist pattern is formed by metal plating. A dimensional change of the pattern is prevented, and a high precision metal plating mask pattern is obtained even if a substrate has large area. A high precision fine pattern can be formed efficiently by patterning a photo resist layer by using such a metal plating mask pattern.</description><edition>6</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; APPARATUS THEREFOR ; CHEMISTRY ; CINEMATOGRAPHY ; ELECTROFORMING ; ELECTROGRAPHY ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; HOLOGRAPHY ; MATERIALS THEREFOR ; METALLURGY ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960216&DB=EPODOC&CC=JP&NR=H0844037A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960216&DB=EPODOC&CC=JP&NR=H0844037A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ASAKA KENJI</creatorcontrib><creatorcontrib>KUBOZONO KENICHI</creatorcontrib><creatorcontrib>UMEDA KAZUO</creatorcontrib><title>METAL PLATING MASK PATTERN</title><description>PURPOSE:To form in uniform film thickness a metal plating mask pattern used as a light shielding layer at the time of exposing a resist layer in a resist pattern forming stage. CONSTITUTION:A dummy pattern part 14 consisting of a metal plating part 15 and a non-plating part 16 are provided at a periphery of a working-effective pattern part 10 in which a pattern corresponding to a resist pattern is formed by metal plating. A dimensional change of the pattern is prevented, and a high precision metal plating mask pattern is obtained even if a substrate has large area. A high precision fine pattern can be formed efficiently by patterning a photo resist layer by using such a metal plating mask pattern.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROFORMING</subject><subject>ELECTROGRAPHY</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1996</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDydQ1x9FEI8HEM8fRzV_B1DPZWCHAMCXEN8uNhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GFiYmBsbmjsZEKAEA87kgAQ</recordid><startdate>19960216</startdate><enddate>19960216</enddate><creator>ASAKA KENJI</creator><creator>KUBOZONO KENICHI</creator><creator>UMEDA KAZUO</creator><scope>EVB</scope></search><sort><creationdate>19960216</creationdate><title>METAL PLATING MASK PATTERN</title><author>ASAKA KENJI ; KUBOZONO KENICHI ; UMEDA KAZUO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0844037A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1996</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROFORMING</topic><topic>ELECTROGRAPHY</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><toplevel>online_resources</toplevel><creatorcontrib>ASAKA KENJI</creatorcontrib><creatorcontrib>KUBOZONO KENICHI</creatorcontrib><creatorcontrib>UMEDA KAZUO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ASAKA KENJI</au><au>KUBOZONO KENICHI</au><au>UMEDA KAZUO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METAL PLATING MASK PATTERN</title><date>1996-02-16</date><risdate>1996</risdate><abstract>PURPOSE:To form in uniform film thickness a metal plating mask pattern used as a light shielding layer at the time of exposing a resist layer in a resist pattern forming stage. CONSTITUTION:A dummy pattern part 14 consisting of a metal plating part 15 and a non-plating part 16 are provided at a periphery of a working-effective pattern part 10 in which a pattern corresponding to a resist pattern is formed by metal plating. A dimensional change of the pattern is prevented, and a high precision metal plating mask pattern is obtained even if a substrate has large area. A high precision fine pattern can be formed efficiently by patterning a photo resist layer by using such a metal plating mask pattern.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR APPARATUS THEREFOR CHEMISTRY CINEMATOGRAPHY ELECTROFORMING ELECTROGRAPHY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS |
| title | METAL PLATING MASK PATTERN |
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