METHOD FOR APPLYING POLYIMIDE PRECURSOR COMPOSITION TO SEMICONDUCTOR SUBSTRATE
PURPOSE:To provide a spin-coating method capable of forming a polyimide resin film having a uniform film thickness up to the end section of the surface of a semiconductor substrate. CONSTITUTION:On the occasion of spin-coating the surface of a semiconductor substrate with a polyimide precursor compo...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | PURPOSE:To provide a spin-coating method capable of forming a polyimide resin film having a uniform film thickness up to the end section of the surface of a semiconductor substrate. CONSTITUTION:On the occasion of spin-coating the surface of a semiconductor substrate with a polyimide precursor composition, a nitrogen gas is blown to the center part of the surface of the semiconductor substrate from a pipe 6, to the upside of the polyimide precursor composition 4 dripped to the center part, rotating the substrate. After the stop of the nitrogen gas blowing, the semiconductor substrate is moreover rotated and coated with the polyimide precursor composition. |
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