METHOD FOR APPLYING POLYIMIDE PRECURSOR COMPOSITION TO SEMICONDUCTOR SUBSTRATE

PURPOSE:To provide a spin-coating method capable of forming a polyimide resin film having a uniform film thickness up to the end section of the surface of a semiconductor substrate. CONSTITUTION:On the occasion of spin-coating the surface of a semiconductor substrate with a polyimide precursor compo...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: SEKINE HIROYOSHI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PURPOSE:To provide a spin-coating method capable of forming a polyimide resin film having a uniform film thickness up to the end section of the surface of a semiconductor substrate. CONSTITUTION:On the occasion of spin-coating the surface of a semiconductor substrate with a polyimide precursor composition, a nitrogen gas is blown to the center part of the surface of the semiconductor substrate from a pipe 6, to the upside of the polyimide precursor composition 4 dripped to the center part, rotating the substrate. After the stop of the nitrogen gas blowing, the semiconductor substrate is moreover rotated and coated with the polyimide precursor composition.