METHOD OF SELECTIVE SOLID PHASE DIFFUSION IN COMPOUND SEMICONDUCTOR AND MANUFACTURE OF LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE ARRAY

METHOD OF SELECTIVE SOLID PHASE DIFFUSION IN COMPOUND SEMICONDUCTOR AND MANUFACTURE OF LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE ARRAY

PURPOSE: To form a uniform diffusion layer with less variation by forming a diffusion source film containing an impurity for establishing a second conductivity type on a compound semiconductor substrate of a first conductivity type, and forming an insular cap film on the diffusion source film above...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: OGIWARA MITSUHIKO, YANAKA MASUMI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: To form a uniform diffusion layer with less variation by forming a diffusion source film containing an impurity for establishing a second conductivity type on a compound semiconductor substrate of a first conductivity type, and forming an insular cap film on the diffusion source film above the intended diffusion region in the substrate. CONSTITUTION: A ZnO film 13 as diffusion source film is formed on a n-type GaAs1- XPX epitaxial substrate (0