FORMATION OF LARGE SURFACE AREA THIN FILM BY LASER DEPOSITION METHOD AND DEVICE THEREFOR

PURPOSE: To form a large surface area thin film by laser deposition method without using a complicated device and operation. CONSTITUTION: A target 6 and a substrate 4 are arranged to face each other in an air-tight chamber 3 capable of controlling the pressure or atmosphere of the inside. An oxide...

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Bibliographische Detailangaben
1. Verfasser:	NAGAISHI RYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE: To form a large surface area thin film by laser deposition method without using a complicated device and operation. CONSTITUTION: A target 6 and a substrate 4 are arranged to face each other in an air-tight chamber 3 capable of controlling the pressure or atmosphere of the inside. An oxide superconducting thin film is grown on the film forming surface of the substrate 4 by irradiating a target 6 with beams 10 divided into four by a beam divider 21. The large surface area thin film is formed since the substantially wide surface area of the target is irradiated at the same time with the laser beam.