LIGHT-EMITTING DIODE ARRAY AND MANUFACTURE THEREOF

PURPOSE: To provide a light-emitting diode array of high density and high performance and manufacture thereof. CONSTITUTION: After forming a diffusion source film, an anneal cap film in order on a compound semiconder substrate 11 of a first conductive type, a second conductive type diffusion region 13 is formed by heat diffusion. Thereafter, the anneal cap film and a diffusion source film are patterned by using a known lithography. Later, an ion is implanted deeper than a diffusion depth of impurities on the part of an exposed diffusion region 13 so as to form an insulated region 21. Later, after removing all films provided on the substrate 11, and interlayer insulating film 25, a p-side electrode 27 and an n-side electrode 29 are formed. In a light-emitting diode array thus manufactured, the diffusion region 13 is separated by the insulated region 21. And a boundary region 23 between the diffusion region 13 and the insulated region 21 is practically vertical to the surface of the substrate 11.