MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE: To enable applying a high program voltage with a control gate electrode, by implanting ions for controlling the threshold value of a transistor, and forming a low concentration diffusion layer of low impurity concentration, in the peripheral region of the control gate electrode of a single...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SHIMIZU SHOJI, NARUGE KIYOMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!