INAS/GASB/ALSB MATERIAL BASED SRAM AND ITS MANUFACTURE

INAS/GASB/ALSB MATERIAL BASED SRAM AND ITS MANUFACTURE

PURPOSE: To provide an SRAM constituted of a first and a second RITDs constructed of a heterostructure, including a GaSb active layer sandwiched between AlSb barrier layers respectively, wherein the barrier layer is further sandwiched between InAs layers and each RITD has a contact connected to a fi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KUSHIADON SEODOA ZUU, HAABAATO GORONKIN, SAIIDO ENU TEERANI, JIYUN SHIEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PURPOSE: To provide an SRAM constituted of a first and a second RITDs constructed of a heterostructure, including a GaSb active layer sandwiched between AlSb barrier layers respectively, wherein the barrier layer is further sandwiched between InAs layers and each RITD has a contact connected to a first InAs layer. CONSTITUTION: A TD 16 includes an AlSb layer 34 sandwiched between InAs layers 33, 35. A firs InAs layer 37 of respective RITD 12, 14 is integrally formed with the second InAs layer 35 of the TD 16, and a read/write terminal 26 is connected to the second InAs layer 33 of the TD 16.