BIPOLAR TRANSISTOR OF PNP FORM

BIPOLAR TRANSISTOR OF PNP FORM

PROBLEM TO BE SOLVED: To improve the characteristic of a pnp-type transistor. SOLUTION: This pnp-type bipolar transistor having a highly doped p- conductive emitter region 8, a base region 7, a collector region, an n-conductive region 2 buried below the emitter region and the other p-conductive regi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KAARUHAINTSU MIYURAA, HORUGAA PEERE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To improve the characteristic of a pnp-type transistor. SOLUTION: This pnp-type bipolar transistor having a highly doped p- conductive emitter region 8, a base region 7, a collector region, an n-conductive region 2 buried below the emitter region and the other p-conductive region 10 reaching the embedded region 2 from the emitter region 8 of high doping is provided.