MANUFACTURE OF SEMICONDUCTOR DEVICE

MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE: To remove an SiO2 layer from the surface of a TiSi2 layer without doing damage to the TiSi2 layer 2. CONSTITUTION: This has a process of removing the SiO2 layer 7 made on a TiSi2 layer 6, using hydrogen fluoride gas, and a process of removing it, heating the TiFx , layer 8 made on the TiSi2...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MURAOKA KOICHI, NISHINO HIROTAKE, KUNISHIMA IWAO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: To remove an SiO2 layer from the surface of a TiSi2 layer without doing damage to the TiSi2 layer 2. CONSTITUTION: This has a process of removing the SiO2 layer 7 made on a TiSi2 layer 6, using hydrogen fluoride gas, and a process of removing it, heating the TiFx , layer 8 made on the TiSi2 layer 6 made on the TiSi2 layer 6 at the time of removal of the SiO2 layer 7.