SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE

PURPOSE: To provide a technique capable of facilitating the working of an aperture part for fusing a fuse element. CONSTITUTION: A laminated wiring 7 is formed as the uppermost layer wiring of a multilayered wiring, together with a high melting point metal layer 3 which is constituted as a fuse elem...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NOISSHIKI TAKAYUKI, TANBA NOBUO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: To provide a technique capable of facilitating the working of an aperture part for fusing a fuse element. CONSTITUTION: A laminated wiring 7 is formed as the uppermost layer wiring of a multilayered wiring, together with a high melting point metal layer 3 which is constituted as a fuse element and composed of W, Ti, and a metal layer 4 for wiring which is formed on the metal layer 3 of high melting point and composed of Al or the like. The working of an aperture part for fusing the fuse element is facilitated when the number of wiring layers is increased, by using the high melting point metal layer 3 of the uppermost layer wiring as a fuse element.