SEMICONDUCTOR DEVICE

PURPOSE:To provide a semiconductor device provided with an Al electrode wiring layer containing silicon in which etching working property and electro- migration resistance can be improved. CONSTITUTION:The device consists of an Si substrate 11 having a diffusion layer 12, insulation layer 13 provide...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	EGAWA HIDEMITSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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