SEMICONDUCTOR DEVICE

PURPOSE:To provide a semiconductor device provided with an Al electrode wiring layer containing silicon in which etching working property and electro- migration resistance can be improved. CONSTITUTION:The device consists of an Si substrate 11 having a diffusion layer 12, insulation layer 13 provide...

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Bibliographische Detailangaben
1. Verfasser:	EGAWA HIDEMITSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To provide a semiconductor device provided with an Al electrode wiring layer containing silicon in which etching working property and electro- migration resistance can be improved. CONSTITUTION:The device consists of an Si substrate 11 having a diffusion layer 12, insulation layer 13 provided on the Si substrate in such a manner as to exposed the layer 12, a barrier metal layer 14 provided on the layer 12, and an Al electrode wiring layer 15 containing Si that is provided on the layer 14 in such a manner as to be in contact with the layer 12. The Si concentration x(wt%) of the layer 15 is set to a range of 0