STATIC ELECTRICITY PROTECTIVE ELEMENT FOR SEMICONDUCTOR INTEGRATED CIRCUIT

PURPOSE: To program an optimum operating voltage after a manufacturing process is determined, by connecting an emitter with a base, connecting a collector with one anode/cathode, and connecting the other anode/cathode with the base, via a point different from the point where the emitter is connected with the base. CONSTITUTION: A static electricity protective element is formed by connecting a lateral PNP transistor PNP 17 with a lateral punch-through element PTD 17. In the static electricity protective element, an emitter 13a, which is a P-type diffusion layer of the PNP 17, is connected with the base 12 of the PNP 17, via one N-type diffusion layer 14a, and with a terminal 15 connected with a power supply. A collector 13b, which is a P-type diffusion layer of the PNP 17, and a cathode 13d, which is a P-type diffusion layer of the PTD 17, are connected with a terminal 16 corresponding to an input terminal. An anode 13c, which is a P-type diffusion layer of the PTD 17, is connected with the base 12 of the PNP 17, via the other N-type diffusion layer 14b.