PLASMA TREATING METHOD AND ITS DEVICE

PURPOSE:To provide plasma treating technique capable of coping with high integration and refinement with treating under a low pressure condition. CONSTITUTION:This device has a primary side coil 5a connected to a RF power source 4 and a secondary side coil 5b connected to upper and lower electrodes...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	TAMAI TAKAHIRO, HASEBE ARIHIRO, HARASHIMA MASASHIGE, OGASAWARA MITSURU, MARUMO HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To provide plasma treating technique capable of coping with high integration and refinement with treating under a low pressure condition. CONSTITUTION:This device has a primary side coil 5a connected to a RF power source 4 and a secondary side coil 5b connected to upper and lower electrodes 1 and 2, and phases are staggered by 180 deg. with each other to supply the electric power of the RF power source 4 to both the electrodes 1 and 2 via a splitter transformer 5. The electric power having a frequency of 350-450kHz degree is supplied to the respective electrodes 1 and 2 from the RF power source 4. Electric power, having a frequency different from that of electric power supplied from the RF power source 4, is overlappedly supplied to at least one side of the upper and lower electrodes 1 and 2 from high frequency power sources 7a and 7b. Electric power having the frequencies of about 40.6 and 13.56MHz is supplied to the upper and lower electrodes 1 and 2 respectively from the high frequency power sources.