FABRICATION OF SEMICONDUCTOR DEVICE

PURPOSE: To provide a method for fabricating a semiconductor device in which the contact of multilayer interconnection is stabilized. CONSTITUTION: An insulating film 2 is deposited on a first layer aluminum interconnection 1 and a resist mask 3 for making a contact hole is formed on the insulating film 2 which is then etched to make a contact hole 4. Subsequently, the side wall of contact hole 4 is cleaned with pure water and the resist mask 4 is subjected to ashing. Finally, a second layer aluminum interconnection 7 is formed on the insulating film 2 including the contact hole 4.