PRODUCTION OF PHASE SHIFT PHOTOMASK

PURPOSE: To provide a process for producing a phase shift mask with which the damage of light shielding parts does not arise at the time of patterning a shifter layer by etching. CONSTITUTION: This process for production includes a stage for forming light shielding layer patterns 14A by applying a f...

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Bibliographische Detailangaben
1. Verfasser:	TAKEI SHIGEO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: To provide a process for producing a phase shift mask with which the damage of light shielding parts does not arise at the time of patterning a shifter layer by etching. CONSTITUTION: This process for production includes a stage for forming light shielding layer patterns 14A by applying a first resist 15 on a light shielding layer 14 and forming a first resist 15 and first resist patterns 15A, thereon, then etching the exposed light shielding layer 14, and a stage for forming phase shift patterns by curing the first resist patterns 15A, covering the entire surface of the light shielding layer patterns 14A with the first resist patterns 15A, applying a second resist 16 thereon in this state, patterning the second resist 16 to form second resist patterns and etching an exposed phase shifter layer 13 with the first resist patterns 15A and the second resist patterns as an etching resistant mask.