PLASMA LOW TEMPERATURE ETCHING DEVICE

PURPOSE: To execute a precise etching work by suppressing a temp. variation of a matter to be etched lower than heretofore. CONSTITUTION: A liq. nitrogen ejection chamber 14 is disposed just under a lower electrode, and an ejection device 15 is installed in the liq. nitrogen ejection chamber 14. Num...

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Bibliographische Detailangaben
Hauptverfasser:	KIMIJIMA TOMIO, SAWAI MIKIO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MICROSTRUCTURAL TECHNOLOGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PURPOSE: To execute a precise etching work by suppressing a temp. variation of a matter to be etched lower than heretofore. CONSTITUTION: A liq. nitrogen ejection chamber 14 is disposed just under a lower electrode, and an ejection device 15 is installed in the liq. nitrogen ejection chamber 14. Numerous ejection holes for ejecting the liq. nitrogen are formed at the lower electrode 20 side of the ejection device 15. A fluorescent thermometer (in figure 1, only an optical fiber 24 is indicated.) is attached on a matter 30 to be etched, and the liq. nitrogen is ejected intermittently toward a cooling surface 13 with the ejection device 15 so that temp. detected with the thermometer may reach a prescribed value. In such a way, a precise temp. control in ±1 deg.C is possible.