SPUTTERING DEVICE

PURPOSE: To provide a sputtering device in which a sputtered film deposited on a shield member is hard to separate and the scattering of a separated fine powder can be effectively prevented. CONSTITUTION: An electrode 2 with a target 1 mounted on and an electrode 4 with a wafer 3 held to are dispose...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	TOGANO YOSHIAKI, SHIGETA MASAMI, SAKO YAMATO, OGAWA HARUHISA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE: To provide a sputtering device in which a sputtered film deposited on a shield member is hard to separate and the scattering of a separated fine powder can be effectively prevented. CONSTITUTION: An electrode 2 with a target 1 mounted on and an electrode 4 with a wafer 3 held to are disposed in opposite to each other in a chamber 5, and when the target 1 is sputtered by applying a voltage between both electrodes 2, 4 to form a sputter film on the wafer 3, the scattering of sputter particles in the direction other than that from the target 1 to the wafer 3 can be prevented by a shield member 20 provided in the vicinity of the circumferential edge part 1a of the target 1. The tip part 22 of the shield member 20 extending above the circumferential edge 1a of the target 1 is formed in a circular-arc form having a fixed radius and also the inner wall part 23 of the shield member 20 surrounding the outer part of the circumferential edge 1a of the target 1 is formed in a circular-arc form having a fixed radius.