MANGETORESISTANCE EFFECT HEAD

PURPOSE: To obtain a head having stable electromagnetic conversion characteristic by using a permanent magnet film on the edge area. CONSTITUTION: A SAL film 51, separation film 52 and NiFe MR film 53 are formed and a photoresist like a stencil is formed on the center active region 54. Then the SAL 51, separation film 52 and MR film 53 in the area not masked by the resist is removed by ion milling. In this process, the substrate is tilted by a proper angle to the ion beams and rotated while the angle is maintained to form a tapered part 55. Then a permanent magnet film 57 and an electrode film 58 are deposited to form the edge active region 56. As for the permanent magnet film, a Co0.82 Cr0.09 Pt0.09 film or Co0.80 Cr0.08 Pt0.09 (ZrO2 )0.03 film is used. These permanent magnet films are formed by RF sputtering while controlling the density of ZrO2 in the CoCrPt film by disposing a ZrO2 chip on the target. The film thickness of the permanent magnet 57 is selected to be 50nm and 52nm, respectively, so that the bias magnetic field given to the center active region 54 has the same component as that of the permanent magnet film.