SEMICONDUCTOR DEVICE

PURPOSE: To increase a signal transmission speed and lessen an electric noise due to a stray capacitance between a semiconductor chip and leads by locating outer terminals for signals and inner leads in the same direction against a common inner lead section. CONSTITUTION: Inner leads 3A have their o...

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Bibliographische Detailangaben
Hauptverfasser:	KAWAI SUEO, KITANO MAKOTO, NISHIMURA ASAO, HASEBE AKIO, ANJO ICHIRO, NISHI KUNIHIKO, SEGAWA MASANORI, KANESHIRO TOKUYUKI, KANEDA AIZO, ICHITANI MASAHIRO, EGUCHI KUNIYUKI, SAEKI JUNICHI, YOSHIDA ISAMU, OGATA MASAJI, YAGUCHI AKIHIRO, NAKAMURA SHOZO, TSUBOSAKI KUNIHIRO, YOKOYAMA TAKASHI, MURAKAMI HAJIME, HOZOJI HIROYUKI, KIKUCHI HIROSHI, KOKADO HIROYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: To increase a signal transmission speed and lessen an electric noise due to a stray capacitance between a semiconductor chip and leads by locating outer terminals for signals and inner leads in the same direction against a common inner lead section. CONSTITUTION: Inner leads 3A have their one ends being integrated with outer leads 3B. The other ends of the inner leads 3A are extended to the center of a DRAM 1. Tips of the other ends of the inner leads 3A are connected to BP's (bonding pad) arranged in the center of the DRAM1 through bonding wires 5. By this method, a signal transmission speed can be increased and an electric noise can be lessened due to a stray capacitance between a semiconductor chip and the leads. At the same time, shorts between the bonding wires of the inner leads for signals and the common inner leads can be prevented.