SUPERCONDUCTIVE BASE BODY FOR HIGH FREQUENCY MEMBER AND PRODUCTION OF THIN FILM

PURPOSE: To obtain a superconductive base body for a high frequency member with which a resonator having excellent in high frequency characteristics can be obtd. by successively forming an oxide high-temp. superconductive layer and a metal on one surface of a dielectric substrate and forming an oxid...

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Bibliographische Detailangaben
Hauptverfasser:	ITOZAKI HIDEO, NAGAISHI RYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WAVEGUIDES
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Beschreibung
Zusammenfassung:	PURPOSE: To obtain a superconductive base body for a high frequency member with which a resonator having excellent in high frequency characteristics can be obtd. by successively forming an oxide high-temp. superconductive layer and a metal on one surface of a dielectric substrate and forming an oxide high-temp. superconductive layer on the other side. CONSTITUTION: A first layer 181 comprising an oxide high-temp. superconductive material (e.g. YBa2 Cu3 O7-x ) is formed on the one surface of a planer dielectric material substrate 12 (e.g. a MgO single crystal substrate). Then a second layer 19 of gold as an electrode is formed on the first layer 181. Further a third layer 141 comprising an oxide high-temp. superconductive material is formed on the other surface of the substrate 12 to obtain a superconductive base body for a high frequency member. The first layer 181 and the third layer 141 are preferably formed to each 0.2-0.5μm thickness, and the second layer 19 is preferably formed to >=1μm thickness. The first, second and third layers are preferably formed by laser vapor deposition method. Thereby, a microwave/millimeter wave device member having high reliability can be easily produced.