PRODUCTION OF THIN FILM BY LASER-BEAM VAPOR DEPOSITION AND THIN FILM PRODUCTION DEVICE

PURPOSE: To provide a highly reliable member for the microwave and millimeter wave devices by irradiating a target consisting of a deposit with a laser beam to sublimate the deposit and forming the film of the deposit on the front and rear of a substrate to be reversed with a specified cycle. CONSTI...

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Bibliographische Detailangaben
Hauptverfasser:	ITOZAKI HIDEO, NAGAISHI RYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WAVEGUIDES
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Beschreibung
Zusammenfassung:	PURPOSE: To provide a highly reliable member for the microwave and millimeter wave devices by irradiating a target consisting of a deposit with a laser beam to sublimate the deposit and forming the film of the deposit on the front and rear of a substrate to be reversed with a specified cycle. CONSTITUTION: The laser beam emitted from a laser oscillator 222 is made incident on a movable mirror 228 to sublimate the atoms of an oxide high-temp. superconductor (YBa2 Cu3 O7-x ) on the surface of a target 212. The atom constituting the target 212 is migrated in an atomic state or ionic state and deposited on the surface of a substrate 208. The target 212 is provided with a rotating mechanism, and even when the mirror 228 is moved only unidirectionally, the laser beam is made incident on the entire face of the target 212. Although the substrate 208 is arranged in parallel with the target 212, the target is reversed with a specified cycle by a motor 256 connected to a substrate holder 210 to deposit a thin film on the front and rear of the substrate 208.