MANUFACTURE OF BEAM LEAD TYPE SEMICONDUCTOR DEVICE

PURPOSE: To provide a method for manufacturing a beam lead type semiconductor device, which lessens the stray capacitance between beam leads and an irregularity in this stray capacitance and can realize the more stabilized manufacture of the device. CONSTITUTION: In a semiconductor substrate part 10, which has an element part 2, which is used as an active region, on the surface and has the surface covered with an insulating film part 30 excluding the part 2, grooves 6 to cross scheduled regions for forming beam leads 5 are formed in the surface covered with the part 30, then, a liquid insulator (a polyimide) is applied to this surface to fill the grooves 6 and at the same time, the formation surfaces of the beam leads 5 are covered to form insulator parts 70. Then, the beam leads 5 are respectively formed on the parts 70 to connect with the part 2 which is used as the active region, a part, which has the part 2 which is used as the active region, of the substrate part 10 is left and the substrate part 10 and each one part of the parts 70 are selectively removed to form a semiconductor substrate 1.