FORMATION OF CONNECTING SECTION OF SEMICONDUCTOR DEVICE

PURPOSE: To provide a method for manufacturing connecting section of semiconductor device by which a semiconductor device in which circuits are made to operate stably can be obtained by preventing the occurrence of a leak current between adjacent transistors. CONSTITUTION: A resist pattern 23 having an opening 24 for contact hole which is positioned above a source impurity-diffused area 13 and reaches part of an element separating section 12 is formed by applying a photoresist material to the surface of an interlayer insulating layer and exposing and developing the material. The contact hole corresponding to the opening 24 is formed by etching the substrate 11 under such a condition that the etching rate of an silicon oxide can become higher than that of P-SiN. Then a P-SiN film 20 exposed in the contact hole is removed by etching the film 20 under such a condition that the etching rate of P-SiN can become higher than that of the silicon oxide.