SEMICONDUCTOR DEVICE PROVIDED WITH OHMIC ELECTRODE AND MANUFACTURE THEREOF

PURPOSE: To provide an electrode material which is capable of being formed into an ohmic electrode provided onto an N-type GaAs substrate which is used as a substrate of a II-VI compound semiconductor light emitting element. CONSTITUTION: A first process where metal layers 41, 42, and 43 containing Ni, Sn, and AuGe respectively are formed on the primary surface 1b of an N-type GaAs substrate 1 and a second process where the substrate 1 is subjected to a heat treatment carried out at temperatures of above 190 deg.C to below 300 deg.C are provided so as to form an ohmic electrode 4 on the primary surface 1B of the substrate 1 for the manufacture of a semiconductor device equipped with an ohmic electrode.