FORMATION OF THIN FILM BY LASER VAPOR DEPOSITION METHOD AND DEVICE THEREOF

PURPOSE: To form a high quality oxide superconductor thin film without fine grain at all on the surface by a laser vapor deposition method. CONSTITUTION: A target 5 and a substrate 6 are arranged oppositely in an airtight chamber 40 adjustable for pressure and atmosphere in the inner part and a sele...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	NAGAISHI RYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE: To form a high quality oxide superconductor thin film without fine grain at all on the surface by a laser vapor deposition method. CONSTITUTION: A target 5 and a substrate 6 are arranged oppositely in an airtight chamber 40 adjustable for pressure and atmosphere in the inner part and a selecting means 44 is arranged between the target 5 and the substrate 6. The laser beam 10 irradiates the target 5 to grow the oxide superconductor thin film on the film forming surface of the substrate 6. The vapor deposited material reaches the substrate 6, but molten material of the target 5 does not reach the substrate 6 by being shut off by the selecting means 44.