MANUFACTURE OF DIODE AND DIODE MANUFACTURED BY SUCH METHOD

PROBLEM TO BE SOLVED: To dispense with a costly doping method and get a manufacture effective in cost for a diode by polishing the second silicon wafer, where the second light doping is performed into a planned thickness after fusion. SOLUTION: A silicon wafer 12 doped lightly is polished into a planned thickness after fusion to a silicon wafer 1 heavily positively doped. As a result, the series resistance of the silicon wafer 2 lightly negatively doped becomes small as far as possible, for it achieves a minimum of forward voltage, but the planned breakdown voltage is kept. What is more, the reason for use of silicon fusion method at this time becomes that the use of a heavily positively doped silicon wafer with a sufficient thickness for secure handling becomes possible and deep p-doping ceases to be necessary. Accordingly, a diode can be manufactured by a method which is effective in cost, and also a diode of low loss can be manufactured.