GAAS HALL ELEMENT

GAAS HALL ELEMENT

PURPOSE: To obtain a Hall element having sufficiently high practical sensitivity and suitable for highly accurate measurement in which the Hall output voltage exhibits sufficiently high stability against fluctuation of ambient temperature by specifying the sheet carrier concentration and the input v...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NAGASE KAZUHIRO, ICHII AKIRA
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator NAGASE KAZUHIRO
ICHII AKIRA
description PURPOSE: To obtain a Hall element having sufficiently high practical sensitivity and suitable for highly accurate measurement in which the Hall output voltage exhibits sufficiently high stability against fluctuation of ambient temperature by specifying the sheet carrier concentration and the input voltage of a conductive layer made of GaAs. CONSTITUTION: A magnetosensitive layer, i.e., a GaAs conductive layer 2, is connected electrically with input side ohmic electrodes 3a, 3a' and output side ohmic electrodes 3b, 3b'. The GaAs conductive layer 2 comprises a thin film of GaAs containing donor impurities and produced by implanting donor impurity ions into a semi-insulating GaAs substrate. The sheet carrier concentration in the GaAs conductive layer 2 is set, preferably, at 8×10 /cm or above and, more preferably, at 1×10 /cm or above. The input resistance between the input side ohmic electrodes 3a, 3a' must be 1.6 times of the sheet resistance of the GaAs conductive layer 2 or above and preferably set in the range of 1.8-3.5 times thereof.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH08204251A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH08204251A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH08204251A3</originalsourceid><addsrcrecordid>eNrjZBB0d3QMVvBw9PFRcPVx9XX1C-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GFkYGJkamho7GxKgBAAoUHa0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GAAS HALL ELEMENT</title><source>esp@cenet</source><creator>NAGASE KAZUHIRO ; ICHII AKIRA</creator><creatorcontrib>NAGASE KAZUHIRO ; ICHII AKIRA</creatorcontrib><description>PURPOSE: To obtain a Hall element having sufficiently high practical sensitivity and suitable for highly accurate measurement in which the Hall output voltage exhibits sufficiently high stability against fluctuation of ambient temperature by specifying the sheet carrier concentration and the input voltage of a conductive layer made of GaAs. CONSTITUTION: A magnetosensitive layer, i.e., a GaAs conductive layer 2, is connected electrically with input side ohmic electrodes 3a, 3a' and output side ohmic electrodes 3b, 3b'. The GaAs conductive layer 2 comprises a thin film of GaAs containing donor impurities and produced by implanting donor impurity ions into a semi-insulating GaAs substrate. The sheet carrier concentration in the GaAs conductive layer 2 is set, preferably, at 8×10 /cm or above and, more preferably, at 1×10 /cm or above. The input resistance between the input side ohmic electrodes 3a, 3a' must be 1.6 times of the sheet resistance of the GaAs conductive layer 2 or above and preferably set in the range of 1.8-3.5 times thereof.</description><edition>6</edition><language>eng</language><subject>ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; TESTING</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19960809&amp;DB=EPODOC&amp;CC=JP&amp;NR=H08204251A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19960809&amp;DB=EPODOC&amp;CC=JP&amp;NR=H08204251A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAGASE KAZUHIRO</creatorcontrib><creatorcontrib>ICHII AKIRA</creatorcontrib><title>GAAS HALL ELEMENT</title><description>PURPOSE: To obtain a Hall element having sufficiently high practical sensitivity and suitable for highly accurate measurement in which the Hall output voltage exhibits sufficiently high stability against fluctuation of ambient temperature by specifying the sheet carrier concentration and the input voltage of a conductive layer made of GaAs. CONSTITUTION: A magnetosensitive layer, i.e., a GaAs conductive layer 2, is connected electrically with input side ohmic electrodes 3a, 3a' and output side ohmic electrodes 3b, 3b'. The GaAs conductive layer 2 comprises a thin film of GaAs containing donor impurities and produced by implanting donor impurity ions into a semi-insulating GaAs substrate. The sheet carrier concentration in the GaAs conductive layer 2 is set, preferably, at 8×10 /cm or above and, more preferably, at 1×10 /cm or above. The input resistance between the input side ohmic electrodes 3a, 3a' must be 1.6 times of the sheet resistance of the GaAs conductive layer 2 or above and preferably set in the range of 1.8-3.5 times thereof.</description><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1996</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBB0d3QMVvBw9PFRcPVx9XX1C-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GFkYGJkamho7GxKgBAAoUHa0</recordid><startdate>19960809</startdate><enddate>19960809</enddate><creator>NAGASE KAZUHIRO</creator><creator>ICHII AKIRA</creator><scope>EVB</scope></search><sort><creationdate>19960809</creationdate><title>GAAS HALL ELEMENT</title><author>NAGASE KAZUHIRO ; ICHII AKIRA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH08204251A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1996</creationdate><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>NAGASE KAZUHIRO</creatorcontrib><creatorcontrib>ICHII AKIRA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAGASE KAZUHIRO</au><au>ICHII AKIRA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GAAS HALL ELEMENT</title><date>1996-08-09</date><risdate>1996</risdate><abstract>PURPOSE: To obtain a Hall element having sufficiently high practical sensitivity and suitable for highly accurate measurement in which the Hall output voltage exhibits sufficiently high stability against fluctuation of ambient temperature by specifying the sheet carrier concentration and the input voltage of a conductive layer made of GaAs. CONSTITUTION: A magnetosensitive layer, i.e., a GaAs conductive layer 2, is connected electrically with input side ohmic electrodes 3a, 3a' and output side ohmic electrodes 3b, 3b'. The GaAs conductive layer 2 comprises a thin film of GaAs containing donor impurities and produced by implanting donor impurity ions into a semi-insulating GaAs substrate. The sheet carrier concentration in the GaAs conductive layer 2 is set, preferably, at 8×10 /cm or above and, more preferably, at 1×10 /cm or above. The input resistance between the input side ohmic electrodes 3a, 3a' must be 1.6 times of the sheet resistance of the GaAs conductive layer 2 or above and preferably set in the range of 1.8-3.5 times thereof.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JPH08204251A
source esp@cenet
subjects ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
title GAAS HALL ELEMENT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T10%3A03%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAGASE%20KAZUHIRO&rft.date=1996-08-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH08204251A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true