GAAS HALL ELEMENT

PURPOSE: To obtain a Hall element having sufficiently high practical sensitivity and suitable for highly accurate measurement in which the Hall output voltage exhibits sufficiently high stability against fluctuation of ambient temperature by specifying the sheet carrier concentration and the input voltage of a conductive layer made of GaAs. CONSTITUTION: A magnetosensitive layer, i.e., a GaAs conductive layer 2, is connected electrically with input side ohmic electrodes 3a, 3a' and output side ohmic electrodes 3b, 3b'. The GaAs conductive layer 2 comprises a thin film of GaAs containing donor impurities and produced by implanting donor impurity ions into a semi-insulating GaAs substrate. The sheet carrier concentration in the GaAs conductive layer 2 is set, preferably, at 8×10 /cm or above and, more preferably, at 1×10 /cm or above. The input resistance between the input side ohmic electrodes 3a, 3a' must be 1.6 times of the sheet resistance of the GaAs conductive layer 2 or above and preferably set in the range of 1.8-3.5 times thereof.