PREPARATION OF SOI SUBSTRATE AND PREPARATION OF DIPOLE TRANSISTOR USING IT

PREPARATION OF SOI SUBSTRATE AND PREPARATION OF DIPOLE TRANSISTOR USING IT

PURPOSE: To obtain a method for producing an isolated SOI(Silicon on Insulator) in which the reliability is enhanced by planarizing a thin film completely through a simple process regardless of the pattern density or the uniformity of the surface while facilitating control of the thickness of each t...

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Bibliographische Detailangaben
Hauptverfasser: RI SHIYUUMIN, KAN TAIGEN, RI SEIHAAN, KIYOU CHINEI, CHIYOU TOKUKOU, REN HEIRETSU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PURPOSE: To obtain a method for producing an isolated SOI(Silicon on Insulator) in which the reliability is enhanced by planarizing a thin film completely through a simple process regardless of the pattern density or the uniformity of the surface while facilitating control of the thickness of each thin film constituting the substrate. CONSTITUTION: The SOI substrate comprises a second insulation layer 23b formed on the entire surface of a substrate 27 bonded directly thereto, a first insulation layer 23a formed on the second insulation layer 23b and planarized, and an active layer 31 isolated through the first insulation layer 23a.