PHASE SHIFT PHOTOMASK AND ITS PRODUCTION

PURPOSE:To enable transfer of fine patterns by decreasing the variations in the thicknesses of phase, shift films near the end of a light shielding film, thereby obtaining a photomask for which light of shorter wavelengths is usable. CONSTITUTION:The film thickness ratio of the phase shift films 3 t...

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Bibliographische Detailangaben
1. Verfasser:	TAKEKUMA SHUNJI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To enable transfer of fine patterns by decreasing the variations in the thicknesses of phase, shift films near the end of a light shielding film, thereby obtaining a photomask for which light of shorter wavelengths is usable. CONSTITUTION:The film thickness ratio of the phase shift films 3 to the light shielding film 2 is increased in a phase shift photomask. More specifically, the film thickness ratio of the phase shift films 3 to the light shielding film 2 is increased by decreasing the thickness of the light shielding film 2 or increasing the thickness of the phase shift films 3. Since film thickness ratio of the phase shift films 3 to the light shielding film 2 is increased, the variations of the thickness of the phase shift films 3 near the ends of the light shielding film are decreased. As a result, the photomask for which the light of the shorter wavelengths is usable is obtd. and, therefore, the transfer of the finer patterns is possible.