PRODUCTION OF DIAMOND

PURPOSE: To produce a vapor synthesized diamond better in abrasion resistance than that of a conventional diamond. CONSTITUTION: The concentration of a carbon source based on hydrogen in a raw material gas is changed with time and periodically to thereby vapor synthesize a polycrystal diamond having...

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Bibliographische Detailangaben
Hauptverfasser:	TANABE KEIICHIRO, FUJIMORI NAOHARU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BORING CHEMISTRY CRYSTAL GROWTH MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING TURNING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE: To produce a vapor synthesized diamond better in abrasion resistance than that of a conventional diamond. CONSTITUTION: The concentration of a carbon source based on hydrogen in a raw material gas is changed with time and periodically to thereby vapor synthesize a polycrystal diamond having a value of full width at half maximum intensity (FWHM) within the range of 2-20 deg. in a locking curve of the (111) crystal face by making X-rays incident from the surface in the raw material gas in a method for vapor synthesizing the polycrystal diamond from the raw material gas consisting essentially of the hydrogen and the organic compound which is the carbon source.