PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL WAFER AND DEVICE THEREFOR

PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL WAFER AND DEVICE THEREFOR

PURPOSE: To obtain many large-sized wafers in the SiC single crystal growth process by sublimation by using a cylinder having an elliptical or corner-rounded quadrangular base as a crucible or the inner wall of a growth chamber. CONSTITUTION: An SiC seed crystal substrate 3 is mounted on the base of...

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Bibliographische Detailangaben
Hauptverfasser: ONOE KOZO, YASHIRO HIROKATSU
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PERFORMING OPERATIONS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TRANSPORTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
WORKING CEMENT, CLAY, OR STONE
WORKING STONE OR STONE-LIKE MATERIALS
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Zusammenfassung:PURPOSE: To obtain many large-sized wafers in the SiC single crystal growth process by sublimation by using a cylinder having an elliptical or corner-rounded quadrangular base as a crucible or the inner wall of a growth chamber. CONSTITUTION: An SiC seed crystal substrate 3 is mounted on the base of the grwoth chamber 2 of a cylindrical graphite crucible 1 having an elliptic inner wall or a corner-rounded base, and an SiC raw powder 5 in the crucible is sublimated in an inert gas atmosphere to grow an SiC single crystal ingot 4 on the SiC substrate vertically to the base. The ingot 4 is affected by the shape of the inner wall of the growth chamber, and a cylindrical ingot having an elliptic or corner-rounded quadrangular base is obtained. The ratio of the minor axis (a) to major axis (b) is appropriately controlled to about 1:2. The ingot 4 is cut parallel to the growth direction or cut at an inclination of several degrees to the growth direction, and many large and uniform-sized SiC wafers 9 are obtained.