PLASMA TREATMENT APPARATUS

PURPOSE: To improve uniformity of a treating of objects by a batch-processing plasma treatment. CONSTITUTION: Lamps 9, 10, for example halogen lamps, for heating are installed at prescribed positions in the outer circumference of a bell jar 2, variable voltage electric power sources 11, 12 to supply...

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Bibliographische Detailangaben
Hauptverfasser:	NAKAJIYOU KAZUTSUNA, KAWAI KAZUHIKO, MATSUO KAZUHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: To improve uniformity of a treating of objects by a batch-processing plasma treatment. CONSTITUTION: Lamps 9, 10, for example halogen lamps, for heating are installed at prescribed positions in the outer circumference of a bell jar 2, variable voltage electric power sources 11, 12 to supply electric power voltage are connected respectively with the lamps 9, 10 for heating, and on the completion of conveyance of all of semiconductor wafers to the inside of the bell jar 2, the bell jar 2 is evacuated by a vacuum pump Pv. Electric power is supplied to the lamps 9, 10 for heating by the variable voltage electric power sources 11, 12 to turn on the lamps 9, 10 for heating and while heating the bell jar 2 and the semiconductor wafers being carried out, ashing treatment is carried out, so that the temperature of respective semiconductor wafers becomes uniform and the evenness of the ashing treatment function can be improved.