FORMATION OF THIN FILM BY LASER VAPOR DEPOSITION

PURPOSE: To easily form smooth superconducting thin films having high quality on the surface of a substrate by arranging a substrate and a target in a hermetic chamber in such a manner that the surfaces thereof are held parpendicular to each other and irradiating the target surface with a laser. CON...

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Hauptverfasser: ITOZAKI HIDEO, NAGAISHI RYUKI
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE: To easily form smooth superconducting thin films having high quality on the surface of a substrate by arranging a substrate and a target in a hermetic chamber in such a manner that the surfaces thereof are held parpendicular to each other and irradiating the target surface with a laser. CONSTITUTION: A hermetic chamber 40 in which the target 5 and the substrate 6 arranged in the direction perpendicular to its plane are mounted respectively rotatably by motors 47, 48 is provided with a discharge means 42 and a gas introducing means 43 so that the pressure and atmosphere gaseous components of the inside are made regulatable. The laser beam 10 from a laser apparatus 1 is directionally changed by a mirror 2 and the surface of the target 5 is irradiated with the laser beam from an incident window 41 through a lens 3. Gaseous O2 is simultaneously supplied from the gas introducing means 43 after the inside of the hermetic chamber 40 is evacuated. The thin films of CeO2 are formed on the Al2 O3 substrates by regulatig the pressure in the hermetic chamber to 0.03 to 0.07Torr while exchanging the target 5. The oxide based superconducting films of Y1 Ba2 Cu3 O7-x , etc., are formed by regulating the O2 pressure to 0.8 to 1.5Torr and the thin films of SrTiO3 are formed by regulating the O2 pressure to 0.15 to 0.3 Torr. The oxide based superconducting thin films having the high quality are thus formed.