MOS DEVICE AND MANUFACTURE THEREOF

PURPOSE: To prevent the effect of a short channel that is a problem being generated from a MOS element where the length of a channel becomes short owing to the high integration of an integrated circuit, the increase in resistance of a source and a drain, and the decrease in the reliability of an element due to, for example, the junction breakdown caused by a metal wiring and an electromigration. CONSTITUTION: A gate electrode 9 in a groove form or in other forms is formed between a gate electrode 4 and a source/drain 7 for securing the depth of the junction of the source and drain that are as deep as the depth of the groove. Therefore, by injecting an impurity with a specific concentration below a gate electrode in groove structure and adjusting the concentration of the impurity, electrical characteristics such as a threshold voltage and a leakage current can be adjusted.