METHOD FOR PURIFYING ORGANOMETALLIC COMPOUND

PURPOSE:To industrially and readily obtain a high purity organometallic compound suitable as a raw material for compound semiconductor fields by bringing a heated liquid organometallic compound into contact with a cooling material and solidifying and depositing the compound on the surface of the cooling material. CONSTITUTION:A liquid organometallic compound (containing an oxygen- containing compound, etc., as impurity) such as trimethylaluminum, trimmethylgallium, trymethylindium, triisobutylaluminum, dimethylaluminum hydride, t-butylphosphine or t-butylarsine is brought into contact with a cooling material such as a cooling tube kept to a melting point or above of the compound under stirring to solidify and deposit the organometallic compound on the surface of the cooling material. Then, the deposited compound is separated from the residual organometallic compound kept in a liquid state to recover the solidified and deposited purified compound. Furthermore, the deposition rate is preferably controlled so that the thickness of the deposited compound becomes about 1-5mm.