ZIRCONIUM(ZR)ORGANIC METAL PRECURSOR AND PREPARATION THEREOF
PURPOSE: To provide a new zirconium-based organic metal precursor where vapotization property, and stability at a vaporization temperature are improved, and a lead-zirconium-titanium thin film with improved reliability and reproducibility, where its organic metal precursor is synthesized by an in-si...
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| creator | RI KANIN RI SHIYUNKI |
| description | PURPOSE: To provide a new zirconium-based organic metal precursor where vapotization property, and stability at a vaporization temperature are improved, and a lead-zirconium-titanium thin film with improved reliability and reproducibility, where its organic metal precursor is synthesized by an in-site process. CONSTITUTION: Zirconium-based organic metal precursor for ferroelectric PZT thin film that is indicated by Lx .Zr(THD)4 (L is an electron-giving ligand selected from among a group that is constituted of NR3 (R=H, CH3 ) gas and Cl2 gas, THD indicates 2.2', 6,6'-tetramethyl-3,5-heptanedione, and X ranges from 0.3 to 1.5 when L is NR3 and ranges from 0.5 to 2, when L is Cl2 ) is manufactured by loosely moving an electron-giving body in gas shape at a constant temperature by a bubbler containing tetra Zr and synthesizing a reactive adduct insite. |
| format | Patent |
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CONSTITUTION: Zirconium-based organic metal precursor for ferroelectric PZT thin film that is indicated by Lx .Zr(THD)4 (L is an electron-giving ligand selected from among a group that is constituted of NR3 (R=H, CH3 ) gas and Cl2 gas, THD indicates 2.2', 6,6'-tetramethyl-3,5-heptanedione, and X ranges from 0.3 to 1.5 when L is NR3 and ranges from 0.5 to 2, when L is Cl2 ) is manufactured by loosely moving an electron-giving body in gas shape at a constant temperature by a bubbler containing tetra Zr and synthesizing a reactive adduct insite.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CABLES ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CONDUCTORS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INSULATORS ; METALLURGY ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960517&DB=EPODOC&CC=JP&NR=H08124798A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960517&DB=EPODOC&CC=JP&NR=H08124798A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RI KANIN</creatorcontrib><creatorcontrib>RI SHIYUNKI</creatorcontrib><title>ZIRCONIUM(ZR)ORGANIC METAL PRECURSOR AND PREPARATION THEREOF</title><description>PURPOSE: To provide a new zirconium-based organic metal precursor where vapotization property, and stability at a vaporization temperature are improved, and a lead-zirconium-titanium thin film with improved reliability and reproducibility, where its organic metal precursor is synthesized by an in-site process. CONSTITUTION: Zirconium-based organic metal precursor for ferroelectric PZT thin film that is indicated by Lx .Zr(THD)4 (L is an electron-giving ligand selected from among a group that is constituted of NR3 (R=H, CH3 ) gas and Cl2 gas, THD indicates 2.2', 6,6'-tetramethyl-3,5-heptanedione, and X ranges from 0.3 to 1.5 when L is NR3 and ranges from 0.5 to 2, when L is Cl2 ) is manufactured by loosely moving an electron-giving body in gas shape at a constant temperature by a bubbler containing tetra Zr and synthesizing a reactive adduct insite.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CAPACITORS</subject><subject>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CONDUCTORS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INSULATORS</subject><subject>METALLURGY</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1996</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLCJ8gxy9vfzDPXViArS9A9yd_TzdFbwdQ1x9FEICHJ1Dg0K9g9ScPRzAfECHIMcQzz9_RRCPFyDXP3deBhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvFeAh4GFoZGJuaWFozExagA3byow</recordid><startdate>19960517</startdate><enddate>19960517</enddate><creator>RI KANIN</creator><creator>RI SHIYUNKI</creator><scope>EVB</scope></search><sort><creationdate>19960517</creationdate><title>ZIRCONIUM(ZR)ORGANIC METAL PRECURSOR AND PREPARATION THEREOF</title><author>RI KANIN ; RI SHIYUNKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH08124798A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1996</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CAPACITORS</topic><topic>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CONDUCTORS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INSULATORS</topic><topic>METALLURGY</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>RI KANIN</creatorcontrib><creatorcontrib>RI SHIYUNKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RI KANIN</au><au>RI SHIYUNKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ZIRCONIUM(ZR)ORGANIC METAL PRECURSOR AND PREPARATION THEREOF</title><date>1996-05-17</date><risdate>1996</risdate><abstract>PURPOSE: To provide a new zirconium-based organic metal precursor where vapotization property, and stability at a vaporization temperature are improved, and a lead-zirconium-titanium thin film with improved reliability and reproducibility, where its organic metal precursor is synthesized by an in-site process. CONSTITUTION: Zirconium-based organic metal precursor for ferroelectric PZT thin film that is indicated by Lx .Zr(THD)4 (L is an electron-giving ligand selected from among a group that is constituted of NR3 (R=H, CH3 ) gas and Cl2 gas, THD indicates 2.2', 6,6'-tetramethyl-3,5-heptanedione, and X ranges from 0.3 to 1.5 when L is NR3 and ranges from 0.5 to 2, when L is Cl2 ) is manufactured by loosely moving an electron-giving body in gas shape at a constant temperature by a bubbler containing tetra Zr and synthesizing a reactive adduct insite.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS CABLES CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS METALLURGY SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | ZIRCONIUM(ZR)ORGANIC METAL PRECURSOR AND PREPARATION THEREOF |
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