ZIRCONIUM(ZR)ORGANIC METAL PRECURSOR AND PREPARATION THEREOF

PURPOSE: To provide a new zirconium-based organic metal precursor where vapotization property, and stability at a vaporization temperature are improved, and a lead-zirconium-titanium thin film with improved reliability and reproducibility, where its organic metal precursor is synthesized by an in-si...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	RI KANIN, RI SHIYUNKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS METALLURGY SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE: To provide a new zirconium-based organic metal precursor where vapotization property, and stability at a vaporization temperature are improved, and a lead-zirconium-titanium thin film with improved reliability and reproducibility, where its organic metal precursor is synthesized by an in-site process. CONSTITUTION: Zirconium-based organic metal precursor for ferroelectric PZT thin film that is indicated by Lx .Zr(THD)4 (L is an electron-giving ligand selected from among a group that is constituted of NR3 (R=H, CH3 ) gas and Cl2 gas, THD indicates 2.2', 6,6'-tetramethyl-3,5-heptanedione, and X ranges from 0.3 to 1.5 when L is NR3 and ranges from 0.5 to 2, when L is Cl2 ) is manufactured by loosely moving an electron-giving body in gas shape at a constant temperature by a bubbler containing tetra Zr and synthesizing a reactive adduct insite.