METHOD OF PROCESSING SEMICONDUCTOR SUBSTRATE

PURPOSE: To improve electric property such as the breakdown strength of an oxide film made on a semiconductor substrate, and growing single-crystal silicon at a specified pull-up speed and slicing it, using CZ method or MCZ method, so as to form a semiconductor substrate, and performing heat treatme...

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Bibliographische Detailangaben
1. Verfasser:	AMAI TSUTOMU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE: To improve electric property such as the breakdown strength of an oxide film made on a semiconductor substrate, and growing single-crystal silicon at a specified pull-up speed and slicing it, using CZ method or MCZ method, so as to form a semiconductor substrate, and performing heat treatment under specified conditions in reductive or inert atmosphere. CONSTITUTION: Single-crystal silicon is grown at a pull-up speed of 1.3mm/min. or over using either CZ method or MCZ method, and it is sliced into semiconductor substrates. The semiconductor substrates are heat-treated for 30 min. or more at a temperature of 1100 deg.C or over in either reductive or inert atmosphere. Single-crystal silicon of 150mm , n-type, and about 15×10 atoms/cm in concentration of interlattice oxygen is pulled up at a speed of 1.3mm/min, to provide substrates. Moreover, the atmosphere shall be mixed gas among H2 , He, Ne, Ar, Kr, and Xe, or inert atmosphere by any one among Ne, Ar, Kr, and Xe.