THIN FILM SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL DISPLAY USING IT

PURPOSE:To present a high-performance thin film semiconductor device realizing even higher resolution and to realize a liquid crystal display which can show high resolution and excellent images by using such thin film semiconductor device. CONSTITUTION:A TFT having excellent operating characteristic...

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Bibliographische Detailangaben
Hauptverfasser:	UCHIKOGA SHIYUUICHI, AKIYAMA MASAHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PURPOSE:To present a high-performance thin film semiconductor device realizing even higher resolution and to realize a liquid crystal display which can show high resolution and excellent images by using such thin film semiconductor device. CONSTITUTION:A TFT having excellent operating characteristics such as operating threshold, drain current capacity, and mobility can be realized by forming an overlapping length of a source electrode 11 on a channel protective layer 6, which is 2.5 to 1.5% of a channel region length of a semiconductor layer 4, and forming an overlapping length Ls of the source electrode 11 on the channel protective layer 6 which is less than an overlapping length Ld of a drain electrode 8 on the channel, protective layer 6. Moreover, such overlapping lengths is and Ld on the channel protective layer 6 can be controlled by changing forming patterns of the source electrode 11 and the drain electrode 8, so that the manufacturing process is not cumbersome.