SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PURPOSE:To drive a semiconductor integrated circuit by a power-supply voltage at a low voltage by reducing a consumed current at a high-voltage circuit in the semiconductor integrated circuit which is operated by a single power supply, which generates, at the inside, a voltage higher than the power-...

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1. Verfasser: KONISHI HARUO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To drive a semiconductor integrated circuit by a power-supply voltage at a low voltage by reducing a consumed current at a high-voltage circuit in the semiconductor integrated circuit which is operated by a single power supply, which generates, at the inside, a voltage higher than the power-supply voltage and which is provided with the high-voltage circuit for performing a logic processing operation. CONSTITUTION:The title circuit device is constituted of a block transistor 1, a Vcc-system circuit 2, a Vpp-system circuit 3 and a gate-potential-variable circuit 4. The gate potential of the block transistor 1 is controlled by the gate- potential-variable circuit 4. By an enable signal, the gate-potential-variable circuit 4 outputs a signal which controls the gate potential of the block transistor 1.