SEMICONDUCTOR DEVICE

PURPOSE:To obtain a gate-array type semiconductor device with a low power consumption by a method wherein a wiring composed of driving cells and at least two bias circuits is so designed as to have its length as short as possible. CONSTITUTION:Parallel basic cell columns 101 to 10m are arranged and circuits 51 are provided on both sides of the basic cell columns. Cells 10 to 1n,..., m0 to mn are connected to bias main wirings 3, 3'... through bias sub-wirings 4. A bias wiring in which the driving cells CELL10 and CELL20 of the different basic cell columns 101 and 102 are provided between a group of the bias circuits (for instance 51 and 61) which are selected from the different basic cell columns 101 and 102 respectively by providing inter-line bias wirings with which the bias main wirings (for instance 3 and 3') of the different basic cell columns are connected to each other is provided.