DIODE-PROTECTED SEMICONDUCTOR DEVICE

PURPOSE: To provide a diode protective semiconductor device proper to an output from a radio frequency amplifier resistant to considerable power reflection by the mismatch of output impedance. CONSTITUTION: Monolithic constitution is enabled by the type of a field-effect transistor(FET) having a dio...

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Bibliographische Detailangaben
Hauptverfasser:	CHIYAARUZU II UEITSUERU, DEIBUITSUDO JIEI HARUCHIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: To provide a diode protective semiconductor device proper to an output from a radio frequency amplifier resistant to considerable power reflection by the mismatch of output impedance. CONSTITUTION: Monolithic constitution is enabled by the type of a field-effect transistor(FET) having a diode pair, in which a drain is connected to a source. The FET consists of a plurality of mutually coupled transistor sections 28. The diode pair is composed of mutually combined corresponding diode pair sections 37. In the constitution, the diode pair can be integrated easily in general FET structure.