METHOD AND DEVICE FOR FORMING FILM

PURPOSE: To provide a method and device for forming an insulation layer by utilizing the difference in the deposition rate of an insulation substance between a conductive layer and a lower insulation layer. CONSTITUTION: A method includes a first process for treating a first substance layer so that...

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Bibliographische Detailangaben
Hauptverfasser:	KIN CHIYOUKEI, KO MASAKI, TEI YUUJIN, BOKU JINZEN, RI AKINORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE: To provide a method and device for forming an insulation layer by utilizing the difference in the deposition rate of an insulation substance between a conductive layer and a lower insulation layer. CONSTITUTION: A method includes a first process for treating a first substance layer so that the surface of a first substance layer consisting of an arbitrary substance has electrical characteristics and a second process for forming a second substance layer by applying an arbitrary second substance with an electrical polarity that opposes the electrical polarity on the surface of the treated first substance layer. Also, for performing an insulation layer formation method, a CVD device where a DC power supply 63 is connected between a susceptor 61 and a gas injection part 62 is provided, thus forming an insulation layer with improved flatness and deposition characteristics at a low temperature with a simple process.